BUK9608-55 - TrenchMOS transistor Logic level FET

NXP

BUK9608-55 Description

Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET GENERAL .
N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting Using ’trench’ technology the.

BUK9608-55 Applications

* BUK9608-55 QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 5 V MAX. 55 75 187 175 8 UNIT V A W ˚C mΩ PINNING - SOT404 PIN 1 2 3 mb gate drain source drain DESC

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Datasheet Details

Part number: BUK9608-55
Manufacturer: NXP ↗
File Size: 68.83 KB
Datasheet: BUK9608-55_PhilipsSemiconductors.pdf
Description: TrenchMOS transistor Logic level FET

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TrenchMOS transistor Logic level FET NXP

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