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BUK9605-30A - TrenchMOS transistor Logic level FET

Datasheet Summary

Description

N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting.

Features

  • very low on-state resistance. It is intended for use in automotive and general purpose switching.

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Datasheet Details

Part number BUK9605-30A
Manufacturer NXP
File Size 54.66 KB
Description TrenchMOS transistor Logic level FET
Datasheet download datasheet BUK9605-30A Datasheet
Additional preview pages of the BUK9605-30A datasheet.

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Full PDF Text Transcription

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Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device features very low on-state resistance. It is intended for use in automotive and general purpose switching applications. BUK9605-30A QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 5 V VGS = 10 V MAX. 30 75 230 175 5 4.
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