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BUK9606-55B - N-channel TrenchMOS FET

BUK9606-55B Description

BUK9606-55B N-channel TrenchMOS FET Rev.04 * 23 July 2009 Product data sheet 1.Product profile 1.1 General .
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

BUK9606-55B Features

* Low conduction losses due to low on-state resistance
* Q101 compliant
* Suitable for logic level gate drive sources

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N-channel TrenchMOS FET nexperia
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