BUK9606-55B - N-channel TrenchMOS FET
BUK9606-55B Features
* Low conduction losses due to low on-state resistance
* Q101 compliant
* Suitable for logic level gate drive sources
* Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications
* 12 V and 24 V loads
* Automotive systems
