Datasheet4U Logo Datasheet4U.com

1N1183R - Standard Recovery Diode

This page provides the datasheet information for the 1N1183R, a member of the 1N1183 Standard Recovery Diode family.

Features

  • Glass passivated die.
  • Low forward voltage drop.
  • High surge capability.
  • Low leakage current.
  • Normal and Reverse polarity.
  • Metric and UNF threads available DO-203AB (DO-5) Maximum Ratings (TJ = 25oC, unless otherwise noted) Parameter Test Conditions Symbol 1N1183(R) Repetitive peak reverse voltage VRRM 50 RMS reverse voltage VRMS 35 DC blocking voltage VDC 50 Continuous forward current TC ≤ 140oC IF(AV) 35 Surge non-repetitive forward current, half-s.

📥 Download Datasheet

Datasheet preview – 1N1183R

Datasheet Details

Part number 1N1183R
Manufacturer Naina Semiconductor
File Size 542.93 KB
Description Standard Recovery Diode
Datasheet download datasheet 1N1183R Datasheet
Additional preview pages of the 1N1183R datasheet.

📁 Similar Datasheet

  • 1N1183R - Silicon Standard Recovery Diode (America Semiconductor)
  • 1N1183R - Silicon Standard Recovery Diode (GeneSiC)
  • 1N1183 - STANDARD RECOVERY RECTIFIERS (Digitron Semiconductors)
  • 1N1183 - Silicon-Power Rectifiers (Diotec Semiconductor)
  • 1N1183 - 35/40/and 60 Amp Power Silicon Rectifier Diodes (International Rectifier)
  • 1N1183 - Power Silicon Rectifier Diodes (Vishay)
  • 1N1183 - Silicon Standard Recovery Diode (America Semiconductor)
  • 1N1183 - Silicon Power Rectifier (Microsemi)
  • 1N1183 - Silicon Standard Recovery Diode (GeneSiC)
  • 1N1183A - STANDARD RECOVERY RECTIFIERS (Digitron Semiconductors)
Other Datasheets by Naina Semiconductor
  • 1N1183 - Standard Recovery Diode
  • 1N1184 - Standard Recovery Diode
  • 1N1184R - Standard Recovery Diode
  • 1N1185 - Standard Recovery Diode
  • 1N1185R - Standard Recovery Diode
  • 1N1186 - Standard Recovery Diode
  • 1N1186R - Standard Recovery Diode
  • 1N1187 - Standard Recovery Diode

Full PDF Text Transcription

Click to expand full text
Naina Semiconductor Ltd. 1N1183 thru 1N1186R Standard Recovery Diode, 35A Features  Glass passivated die  Low forward voltage drop  High surge capability  Low leakage current  Normal and Reverse polarity  Metric and UNF threads available DO-203AB (DO-5) Maximum Ratings (TJ = 25oC, unless otherwise noted) Parameter Test Conditions Symbol 1N1183(R) Repetitive peak reverse voltage VRRM 50 RMS reverse voltage VRMS 35 DC blocking voltage VDC 50 Continuous forward current TC ≤ 140oC IF(AV) 35 Surge non-repetitive forward current, half-sine wave TC = 25oC IFSM 595 Maximum peak forward voltage IF = 35 A, TJ = 25oC VF 1.2 Reverse current TJ = 25oC TJ = 140oC IR 10 10 1N1184(R) 100 70 100 35 595 1.2 10 10 1N1185(R) 150 105 150 35 595 1.
Published: |