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NB212 - 500mA medium current driver transistors

This page provides the datasheet information for the NB212, a member of the NB211 500mA medium current driver transistors family.

Features

  • [!J package and lead coding.
  • 35 to 65 Volt at 500 mA collector ratings.
  • 1.2 Watts practical power dissipation (TO-92 PLUSTM) -~azz. (,W). C'I.
  • 400 mV guaranteed VCE (sat) characteristics at Ic = 100 mA and IB = 2 mA.
  • Matched HFE groupings for complementary.

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Datasheet preview – NB212

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Other Datasheets by National Semiconductor
  • NB211 - 500mA medium current driver transistors
  • NB213 - 500mA medium current driver transistors
  • NB221 - 500mA medium current driver transistors
  • NB222 - 500mA medium current driver transistors
  • NB223 - 500mA medium current driver transistors

Full PDF Text Transcription

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aaz~.. -(W) r-----------------------------------------------------------------------------, ~National D Semiconductor C'I C'I NB 211.212.213 (NPN) NB221.222.223(PNP) 500mA medium current driver transistors features [!J package and lead coding • 35 to 65 Volt at 500 mA collector ratings • 1.2 Watts practical power dissipation (TO-92 PLUSTM) ... -~azz. (,W...). C'I • 400 mV guaranteed VCE (sat) characteristics at Ic = 100 mA and IB = 2 mA • Matched HFE groupings for complementary applications • "Epoxy B" packaging concept for excellent reliability applications • 4 to 6 Watt amplifier class A drivers • Medium current level switching circuits • LED drivers • TV receivers rn,,........
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