NB213, NB211 Datasheet - National Semiconductor

NB213, NB211, 500mA medium current driver transistors

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Features

* [!J package and lead coding
* 35 to 65 Volt at 500 mA collector ratings
* 1.2 Watts practical power dissipation (TO-92 PLUSTM) -~azz. (,W). C'I
* 400 mV guaranteed VCE (sat) characteristics at Ic = 100 mA and IB = 2 mA
* Matched HFE groupings for complementary ap

Applications

* "Epoxy B" packaging concept for excellent reliability applications
* 4 to 6 Watt amplifier class A drivers
* Medium current level switching circuits
* LED drivers
* TV receivers rn,, maximum ratings C'I zm PARAMETER SYMBOL NB211 NB221 PACKAGE COOE TO-9

NB211-NationalSemiconductor.pdf