LN2351
Natlinear
546.60kb
Super-small package vfm control step-up switching regulator. The LN2351 Series is a CMOS VFM-control step-up switching regulator that mainly consists of a reference voltage source, an oscillator
TAGS
📁 Related Datasheet
LN2352 - Super-Small Package VFM Control Step-up Switching Regulator
(natlinear)
LN2352
Super-Small Package VFM Control Step-up Switching Regulator
■ General Description
The LN2352 Series is a CMOS PFM-control step-up switching co.
LN2300 - N-Channel Enhancement Mode Field Effect Transistor
(natlinear)
N-Channel Enhancement Mode Field Effect Transistor
■ General Description
VDSS 20V
Product Summary ID
3.6A
RDS(ON)(mΩ)TYP 33 @ VGS= 4.5V 52 @ VGS= 2.
LN2301 - P-Channel Enhancement Mode Field Effect Transistor
(natlinear)
P-Channel Enhancement Mode Field Effect Transistor
LN2301
■ General Description
VDSS -20V
Product Summary ID
-3.6A
RDS(ON)(mΩ)TYP 95 @ VGS=-4.5V 1.
LN2302 - N-Channel Enhancement Mode Field Effect Transistor
(natlinear)
N-Channel Enhancement Mode Field Effect Transistor
■ General Description
VDSS 20V
Product Summary ID
3.6A
RDS(ON)(mΩ)TYP 65 @ VGS= 4.5V 90 @ VGS= 2.
LN2302ALT1G - 20V N-Channel Enhancement-Mode MOSFET
(LRC)
LESHAN RADIO COMPANY, LTD.
20V N-Channel Enhancement-Mode MOSFET
FEATURES
● RDS(ON)≦85mΩ@VGS=4.5V ● RDS(ON)≦115mΩ@VGS=2.5V ● RDS(ON)≦135mΩ@VGS=1.8V .
LN2302LT1G - 20V N-Channel MOSFET
(LRC)
LESHAN RADIO COMPANY, LTD.
20V N-Channel Enhancement-Mode MOSFET
●APPLICATIONS 1)High Density Cell Design For Ultra Low On-Resistance
Improved Shoot.
LN2302LT3G - 20V N-Channel MOSFET
(LRC)
LESHAN RADIO COMPANY, LTD.
20V N-Channel Enhancement-Mode MOSFET
●APPLICATIONS 1)High Density Cell Design For Ultra Low On-Resistance
Improved Shoot.
LN2305 - P-Channel Enhancement Mode Field Effect Transistor
(natlinear)
P-Channel Enhancement Mode Field Effect Transistor
LN2305
■ General Description
VDSS -20V
Product Summary ID
-0.45A -0.35A
RDS(ON)(mΩ)TYP 135 @ VG.
LN2306 - N-Channel Enhancement Mode Field Effect Transistor
(natlinear)
N-Channel Enhancement Mode Field Effect Transistor
■ General Description
VDSS 20V
Product Summary ID
0.65A 0.55A
RDS(ON)(mΩ)TYP 130 @ VGS= 4.5V 160.
LN2306LT1G - 30V N-Channel Enhancement-Mode MOSFET
(LRC)
LESHAN RADIO COMPANY, LTD.
30V N-Channel Enhancement-Mode MOSFET
●APPLICATIONS 1)Advanced trench process technology 2)High Density Cell Design For Ul.