2SB1503, 2SB1503_NewJerseySemi Silicon PNP Darlington Power Transistor

New Jersey Semi-Conductor

Description

, One.20 STERN AVE, SPRINGFIELD, NEW JERSEY 07081 U.S.A.TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Darlington Power T.
High DC Current Gain: hFE= 5000(Min)@lc= -7A. Low-Collector Saturation Voltage: VcE.

📥 Download Datasheet

2SB1503 Datasheet Preview — This datasheet PDF includes multiple part numbers: 2SB1503, 2SB1503_NewJerseySemi. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: 2SB1503, 2SB1503_NewJerseySemi
Manufacturer: New Jersey Semi-Conductor
File Size: 96.37 KB
Datasheet: 2SB1503_NewJerseySemi-Conductor.pdf
Description: Silicon PNP Darlington Power Transistor
Note: This datasheet PDF includes multiple part numbers: 2SB1503, 2SB1503_NewJerseySemi.
Please refer to the document for exact specifications by model.

Applications

* Designed for power amplifier applications
* Optimum for 11OW HiFi output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -5 V mm Ic Collecto

2SB1503 Distributors

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2SB1503_NewJerseySemi Silicon PNP Darlington Power Transistor New Jersey Semi-Conductor

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