2SB1503 - Silicon PNP Darlington Power Transistor

This page provides the datasheet information for the 2SB1503, a member of the 2SB1503_NewJerseySemi Silicon PNP Darlington Power Transistor family.

Description

High DC Current Gain: hFE= 5000(Min)@lc= -7A Low-Collector Saturation Voltage: VcE

New Jersey Semi-Conductor

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Datasheet Details

Part number	2SB1503
Manufacturer	New Jersey Semi-Conductor
File Size	96.37 KB
Description	Silicon PNP Darlington Power Transistor
Datasheet	2SB1503 Datasheet
Additional preview pages of the 2SB1503 datasheet.

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Full PDF Text Transcription

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, One. 20 STERN AVE, SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Darlington Power Transistor 2SB1503 DESCRIPTION • High DC Current Gain: hFE= 5000(Min)@lc= -7A • Low-Collector Saturation Voltage: VcE

Published: Nov 25, 2013 |