Datasheet4U Logo Datasheet4U.com

11EQS09 Schottky Barrier Diode

11EQS09 Description

SBD Type :11EQS09 .

11EQS09 Features

* Miniature Size
* Low Forward Voltage Drop
* High Surge Capability
* 30volts trough 100volts Types Available
* 26mm and 52mm Inside Tape Spacing Package Available OUTLINE DRAWING Maximum Ratings Approx Net Weight:0.17g Rating Symbol 11EQS09 Repetitive Peak Reverse Voltage

📥 Download Datasheet

Preview of 11EQS09 PDF
datasheet Preview Page 2

Datasheet Details

Part number
11EQS09
Manufacturer
Nihon Inter Electronics
File Size
22.90 KB
Datasheet
11EQS09_NihonInterElectronics.pdf
Description
Schottky Barrier Diode

📁 Related Datasheet

  • 11E1 - SILICON RECTIFIER DIODES (EIC)
  • 11E2 - SILICON RECTIFIER DIODES (EIC)
  • 11E4 - SILICON RECTIFIER DIODES (EIC)
  • 11E6 - SILICON RECTIFIER DIODES (EIC)
  • 11ES1 - SILICON RECTIFIER DIODES (EIC)
  • 11ES2 - SILICON RECTIFIER DIODES (EIC)

📌 All Tags

Schottky Barrier Diode Nihon Inter Electronics
Nihon Inter Electronics 11EQS09-like datasheet