Part number:
11E1
Manufacturer:
EIC
File Size:
28.06 KB
Description:
Silicon rectifier diodes.
* :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Pb / RoHS Free MECHANICAL DATA :
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable p
11E1
EIC
28.06 KB
Silicon rectifier diodes.
📁 Related Datasheet
11E1 - DIODE
(Nihon Inter Electronics)
DIODE Type : 11E1
FEATURES
* Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 26mm and 52mm Inside Ta.
11E2 - DIODE
(Nihon Inter Electronics)
DIODE Type : 11E2
FEATURES
* Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 26mm and 52mm Inside Ta.
11E2 - SILICON RECTIFIER DIODES
(EIC)
.eicsemi.
11E1 - 11E6
PRV : 100 - 600 Volts Io : 1.0 Ampere
FEATURES :
* High current capability * High surge current capability * High reliabi.
11E4 - SILICON RECTIFIER DIODES
(EIC)
.eicsemi.
11E1 - 11E6
PRV : 100 - 600 Volts Io : 1.0 Ampere
FEATURES :
* High current capability * High surge current capability * High reliabi.
11E6 - SILICON RECTIFIER DIODES
(EIC)
.eicsemi.
11E1 - 11E6
PRV : 100 - 600 Volts Io : 1.0 Ampere
FEATURES :
* High current capability * High surge current capability * High reliabi.
11EFS2 - Low Forward Voltage drop Diode
(Nihon Inter Electronics)
FRD Type : 11EFS2
FEATURES
* Miniature Size * Ultra-Fast Recovery * Low Forward Voltage Drop * Low Power Loss, High Efficiency * High Surge Capability.
11EFS4 - Low Forward Voltage drop Diode
(Nihon Inter Electronics)
FRD Type : 11EFS4
FEATURES
* Miniature Size * Ultra-Fast Recovery * Low Forward Voltage Drop * Low Power Loss, High Efficiency * High Surge Capability.
11EQ04 - Schottky Barrier Diode
(Nihon Inter Electronics)
SBD Type :11EQ04
OFUETLAITNUERDERSAWING
* Miniature Size * Low Forward Voltage drop * Low Power Loss, High Efficiency * High Surge Capability * 40 Vol.
