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BFL4026 - N-Channel Power MOSFET

Features

  • ON-resistance RDS(on)=2.8Ω (typ. ).
  • 10V drive.
  • Input capacitance Ciss=650pF (typ. ) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS IDc.
  • 1 IDpack.
  • 2 IDP Limited only by maximum temperature Tch=150°C Tc=25°C (Our ideal heat dissipation condition).
  • 3 PW≤10μs, duty cycle≤1% 900 V ±30 V 5A 3.5 A 10 A Allowable Po.

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Datasheet Details

Part number BFL4026
Manufacturer ON Semiconductor
File Size 197.17 KB
Description N-Channel Power MOSFET
Datasheet download datasheet BFL4026 Datasheet
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Full PDF Text Transcription

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Ordering number : ENA1797A BFL4026 N-Channel Power MOSFET 900V, 5A, 3.6Ω, TO-220F-3FS http://onsemi.com Features • ON-resistance RDS(on)=2.8Ω (typ.) • 10V drive • Input capacitance Ciss=650pF (typ.) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS IDc*1 IDpack*2 IDP Limited only by maximum temperature Tch=150°C Tc=25°C (Our ideal heat dissipation condition)*3 PW≤10μs, duty cycle≤1% 900 V ±30 V 5A 3.5 A 10 A Allowable Power Dissipation PD Tc=25°C (Our ideal heat dissipation condition)*3 2.
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