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BS170 N-channel MOSFET

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Description

Field Effect Transistor N-Channel, Enhancement Mode BS170, MMBF170 General .
These N. Channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology.

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Features

* High Density Cell Design for Low RDS(ON)
* Voltage Controlled Small Signal Switch
* Rugged and Reliable
* High Saturation Current Capability
* These are Pb
* Free Devices DATA SHEET www. onsemi. com BS170 DGS TO
* 92 3 4.825x4.76 CASE 135AN D GS T

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