BSS138W Datasheet - ON Semiconductor

N-Channel FET

BSS138W Features

* RDS(on) = 3.5 W @ VGS = 10 V, ID = 0.22 A RDS(on) = 6.0 W @ VGS = 4.5 V, ID = 0.22 A

* High Density Cell Design For Extremely Low RDS(on)

* Rugged and Reliable

* Compact Industry Standard SOT

* 323 Surface Mount Package

* These Devices are Pb

* F

BSS138W General Description

These N *Channel Enhancement Mode Field Effect Transistor. These products have been Designed to minimize on *state resistance while provide rugged, reliable, and fast switching performance. These products are particularly suited for low voltage, low current applications such as small s.

BSS138W Datasheet (250.41 KB)