BSS123 Datasheet (ON Semiconductor) - N-Channel Logic Level Enhancement Mode Field Effect Transistor

BSS123, N-Channel Logic Level Enhancement Mode Field Effect Transistor

These N *Channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology.

These products have been designed to minimize on *state resistance while provide rugged, reliable, and fast switching performance.

These products are

BSS123 Features

* 0.17 A, 100 V

* RDS(on) = 6 W @ VGS = 10 V

* RDS(on) = 10 W @ VGS = 4.5 V

* High Density Cell Design for Extremely Low RDS(on)

* Rugged and Reliable

* Compact Industry Standard SOT

* 23 Surface Mount Package

* This Device is Pb