Part number:
BSS123
Manufacturer:
File Size:
215.50 KB
Description:
N-channel logic level enhancement mode field effect transistor.
Datasheet Details
Part number:
BSS123
Manufacturer:
File Size:
215.50 KB
Description:
N-channel logic level enhancement mode field effect transistor.
BSS123, N-Channel Logic Level Enhancement Mode Field Effect Transistor
These N *Channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology.
These products have been designed to minimize on *state resistance while provide rugged, reliable, and fast switching performance.
These products are
BSS123 Features
* 0.17 A, 100 V
* RDS(on) = 6 W @ VGS = 10 V
* RDS(on) = 10 W @ VGS = 4.5 V
* High Density Cell Design for Extremely Low RDS(on)
* Rugged and Reliable
* Compact Industry Standard SOT
* 23 Surface Mount Package
* This Device is Pb
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