BSS123 Datasheet, transistor equivalent, ON Semiconductor

BSS123 Features

  • Transistor
  • 0.17 A, 100 V
  • RDS(on) = 6 W @ VGS = 10 V
  • RDS(on) = 10 W @ VGS = 4.5 V
  • High Density Cell Design for Extremely Low RDS(on)
  • Rugged and Rel

PDF File Details

Part number:

BSS123

Manufacturer:

ON Semiconductor ↗

File Size:

215.50kb

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📄 Datasheet

Description:

N-channel logic level enhancement mode field effect transistor. These N

  • Channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS te

  • Datasheet Preview: BSS123 📥 Download PDF (215.50kb)
    Page 2 of BSS123 Page 3 of BSS123

    BSS123 Application

    • Applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. Features
    • 0.17 A, 100 V
    • <

    TAGS

    BSS123
    N-Channel
    Logic
    Level
    Enhancement
    Mode
    Field
    Effect
    Transistor
    ON Semiconductor

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