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BSS84 P-Channel MOSFET

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Description

P-Channel Enhancement Mode Field-Effect Transistor BSS84 General .
This P. channel enhancement. mode field. effect transistor is produced using onsemi’s proprietary, high cell density, DMOS techno.

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Features

* 0.13 A,
* 50 V, RDS(on) = 10 W at VGS =
* 5 V
* Voltage
* Controlled P
* Channel Small
* Signal Switch
* High
* Density Cell Design for Low RDS(on)
* High Saturation Current
* This Device is Pb
* Free and

Applications

* requiring up to 0.13 A DC and can deliver current up to 0.52 A. This product is particularly suited to low
* voltage applications requiring a low
* current high

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