ECH8660 - Power MOSFET

ON Semiconductor

Datasheet Details

The ECH8660 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching , thereby enablimg high-density mounting.
4V drive.
Halogen free compliance Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch T.

📁 ECH8660 Similar Datasheet

ECH8661 - N-Channel and P-Channel Silicon MOSFETs (Sanyo Semicon Device)
ECH8662 - N-Channel Silicon MOSFETs (Sanyo Semicon Device)
ECH8663R - N-Channel Silicon MOSFETs (Sanyo Semicon Device)
ECH8667 - P-Channel Silicon MOSFETs (Sanyo Semicon Device)
ECH8668 - N-Channel and P-Channel Silicon MOSFETs (Sanyo Semicon Device)
ECH8601 - General-Purpose Switching Device Applications (Sanyo Semicon Device)
ECH8601M - N-Channel Silicon MOSFET (Sanyo)
ECH8601R - N-Channel Silicon MOSFET (Sanyo Semicon Device)

Other Datasheets by ON Semiconductor

Published: Jan 16, 2016 |