• Part: ECH8664R
  • Description: N-Channel Power MOSFET
  • Category: MOSFET
  • Manufacturer: onsemi
  • Size: 211.87 KB
Download ECH8664R Datasheet PDF
onsemi
ECH8664R
Features - Low ON-resistance - 2.5V drive - mon-drain type - Protection diode in - Built-in gate protection resistor - Best suited for Li B charging and discharging switch - Halogen free pliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit When mounted on ceramic substrate (900mm2×0.8mm) Ratings 30 ±12 7 60 1.3 1.4 150 --55 to +150 Unit V V A A W W °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Remended Operating Conditions is not implied. Extended exposure to stresses above the Remended Operating Conditions may affect device reliability. Package Dimensions unit : mm...