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ECH8662 - N-Channel Power MOSFET

Key Features

  • Low ON-resistance.
  • 2.5V drive.
  • Halogen free compliance.
  • Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit When mounted on cera.

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Datasheet Details

Part number ECH8662
Manufacturer onsemi
File Size 221.99 KB
Description N-Channel Power MOSFET
Datasheet download datasheet ECH8662 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENA1259A ECH8662 N-Channel Power MOSFET 40V, 6.5A, 30mΩ, Dual ECH8 http://onsemi.com Features • Low ON-resistance • 2.5V drive • Halogen free compliance • Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit When mounted on ceramic substrate (900mm2×0.8mm) Ratings 40 ±10 6.5 40 1.3 1.5 150 --55 to +150 Unit V V A A W W °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only.