ECH8661
Features
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N-Channel and P-Channel Silicon MOSFETs
General-Purpose Switching Device Applications
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ON-resistance Nch: RDS(on)1=18mΩ(typ.), Pch: ON-resistance RDS(on)1=30mΩ(typ.) The ECH8660 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching , thereby enablimg high-density mounting 4V drive Halogen free pliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit When mounted on ceramic substrate (900mm2×0.8mm) Conditions N-channel 30 ±20 7 40 1.3 1.5 150 --55 to +150 P-channel --30 ±20 --5.5 --40 Unit V V A A W W °C °C
Package Dimensions unit : mm (typ) 7011A-001
Top View 0.25 2.9 0.15 8 5 0 to 0.02 2.8 2.3
Product &...
