FCH76N60NF Datasheet - ON Semiconductor

N-Channel MOSFET

FCH76N60NF Features

* RDS(on) = 28.7 mW (Typ.) @ VGS = 10 V, ID = 38 A

* Ultra Low Gate Charge (Typ. Qg = 230 nC)

* Low Effective Output Capacitance (Typ. Coss(eff.) = 896 pF)

* 100% Avalanche Tested

* This Device is Pb

* Free and is RoHS Compliant Applications

* So

FCH76N60NF General Description

The SUPREMOS® MOSFET is ON Semiconductor’s next generation of high voltage super *junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on *resis.

FCH76N60NF Datasheet (397.06 KB)