FDC2612 Datasheet - ON Semiconductor

FDC2612 N-Channel MOSFET

FDC2612 Features

* 1.1 A, 200 V. RDS(ON) = 725 mW @ VGS = 10 V

* High Performance Trench Technology for Extremely Low RDS(ON)

* High Power and Current Handling Capability

* Fast Switching Speed

* Low Gate Charge (8 nC Typical)

* This Device is Pb

* Free, Halide F

Datasheet Details

FDC2612

301.21 KB

N-channel mosfet.

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FDC2612 FDC2612 N-Channel MOSFET ON Semiconductor

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