FDC2612 - N-Channel MOSFET
FDC2612 Features
* 1.1 A, 200 V. RDS(ON) = 725 mW @ VGS = 10 V
* High Performance Trench Technology for Extremely Low RDS(ON)
* High Power and Current Handling Capability
* Fast Switching Speed
* Low Gate Charge (8 nC Typical)
* This Device is Pb
* Free, Halide F
