FDC2612 N-Channel MOSFET

ON Semiconductor

Description

MOSFET * N-Channel, POWERTRENCH) 200 V FDC2612 General .
This N. Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or convent.

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Datasheet Specifications

Part number: FDC2612
Manufacturer: ON Semiconductor ↗
File Size: 301.21 KB
Datasheet: FDC2612-ONSemiconductor.pdf
Description: N-Channel MOSFET

Features

* 1.1 A, 200 V. RDS(ON) = 725 mW @ VGS = 10 V
* High Performance Trench Technology for Extremely Low RDS(ON)
* High Power and Current Handling Capability
* Fast Switching Speed
* Low Gate Charge (8 nC Typical)
* This Device is Pb
* Free, Halide F

Applications

* DC/DC Converter DATA SHEET www. onsemi. com VDSS 200 V RDS(ON) MAX 725 mW @ 10 V ID MAX 1.1 A DDS D DG TSOT23 6
* Lead (SUPERSOTt
* 6) CASE 419BL MARKING DIAGRAM 262 M 1 262 = Device Code M = Date Code PIN CONNECTION 1 6 2 5 3 4 ORDERING INFORMATION See detailed orde

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FDC2612 N-Channel MOSFET ON Semiconductor

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