FDC3512 N-Channel MOSFET

ON Semiconductor

Description

MOSFET * N-Channel, POWERTRENCH) 80 V FDC3512 General .
This N. Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or convent.

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Datasheet Specifications

Part number: FDC3512
Manufacturer: ON Semiconductor ↗
File Size: 270.36 KB
Datasheet: FDC3512-ONSemiconductor.pdf
Description: N-Channel MOSFET

Features

* 3.0 A, 80 V
* RDS(ON) = 77 mW @ VGS = 10 V
* RDS(ON) = 88 mW @ VGS = 6 V
* High Performance Trench Technology for Extremely Low RDS(ON)
* Low Gate Charge (13 nC Typical)
* High Power and Current Handling Capability
* Fast Switching Speed

Applications

* DC/DC Converter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Ratings Unit VDSS Drain
* Source Voltage 80 V VGSS Gate
* Source Voltage ±20 V ID Drain Current Continuous (Note 1a) 3.0 A Pulsed 20 PD Maximum (Note 1a) Power Dis

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FDC3512 N-Channel MOSFET ON Semiconductor

ON Semiconductor FDC3512-like datasheet