FDC3616N Datasheet - Fairchild Semiconductor

FDC3616N - N-Channel MOSFET

FDC3616N Features

* 3.7 A, 100 V. RDS(ON) = 70 mΩ @ VGS = 10 V RDS(ON) = 80 mΩ @ VGS = 6.0 V

* High performance trench technology for extremely low RDS(ON)

* Low gate charge (23nC typical)

* High power and current handling capability

* Fast switching speed. Applications

Datasheet Details

FDC3616N

Fairchild Semiconductor

173.20 KB

N-channel mosfet.

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