Datasheet Details
- Part number
- FDC3616N
- Manufacturer
- Fairchild Semiconductor
- File Size
- 173.20 KB
- Datasheet
- FDC3616N_FairchildSemiconductor.pdf
- Description
- N-Channel MOSFET
FDC3616N Description
FDC3616N January 2004 FDC3616N 100V N-Channel PowerTrench MOSFET General .
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional sw.
FDC3616N Features
* 3.7 A, 100 V. RDS(ON) = 70 mΩ @ VGS = 10 V RDS(ON) = 80 mΩ @ VGS = 6.0 V
* High performance trench technology for extremely low RDS(ON)
* Low gate charge (23nC typical)
* High power and current handling capability
FDC3616N Applications
* DC/DC converter
* Load Switching
Bottom Drain
G S S S SuperSOT-6
TM
1
S
6 5 4
2 3
S FLMP
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current
* Continuous
* Pulsed Maximum Power Dissipation
TA=25oC u
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