FDC3616N Datasheet - Fairchild Semiconductor

FDC3616N, N-Channel MOSFET

FDC3616N January 2004 FDC3616N 100V N-Channel PowerTrench MOSFET General .
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional sw.

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Datasheet Details

Part number:

FDC3616N

Manufacturer:

Fairchild Semiconductor

File Size:

173.20 KB

Description:

N-Channel MOSFET

Features

* 3.7 A, 100 V. RDS(ON) = 70 mΩ @ VGS = 10 V RDS(ON) = 80 mΩ @ VGS = 6.0 V
* High performance trench technology for extremely low RDS(ON)
* Low gate charge (23nC typical)
* High power and current handling capability

Applications

* DC/DC converter
* Load Switching Bottom Drain G S S S SuperSOT-6 TM 1 S 6 5 4 2 3 S FLMP Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current
* Continuous
* Pulsed Maximum Power Dissipation TA=25oC u

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FDC3616N N-Channel MOSFET Fairchild Semiconductor

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