FDC365P P-Channel PowerTrench MOSFET

Fairchild Semiconductor

Description

FDC365P P-Channel PowerTrench® MOSFET FDC365P P-Channel PowerTrench® MOSFET -35V, -4.3A, 55mΩ .
This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized Bvdss.

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Datasheet Specifications

Part number: FDC365P
Manufacturer: Fairchild Semiconductor
File Size: 234.97 KB
Datasheet: FDC365P-FairchildSemiconductor.pdf
Description: P-Channel PowerTrench MOSFET

Features

* Max rDS(on) = 55mΩ at VGS = -10V, ID = -4.2A
* Max rDS(on) = 80mΩ at VGS = -4.5V, ID = -3.2A

Applications

* Applications
* Inverter
* Power Supplies S D D Pin 1 D D SuperSOTTM -6 G D1 D2 G3 6D 5D 4S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage -Continuous -Pulsed Power Dissipation P

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FDC365P P-Channel PowerTrench MOSFET Fairchild Semiconductor

Fairchild Semiconductor FDC365P-like datasheet