Datasheet Details
- Part number
- FDC365P
- Manufacturer
- Fairchild Semiconductor
- File Size
- 234.97 KB
- Datasheet
- FDC365P-FairchildSemiconductor.pdf
- Description
- P-Channel PowerTrench MOSFET
FDC365P Description
FDC365P P-Channel PowerTrench® MOSFET FDC365P P-Channel PowerTrench® MOSFET -35V, -4.3A, 55mΩ .
This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized Bvdss.
FDC365P Features
* Max rDS(on) = 55mΩ at VGS = -10V, ID = -4.2A
* Max rDS(on) = 80mΩ at VGS = -4.5V, ID = -3.2A
FDC365P Applications
* Applications
* Inverter
* Power Supplies
S D D
Pin 1
D D
SuperSOTTM -6
G
D1 D2 G3
6D 5D 4S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDS VGS ID
PD TJ, TSTG
Parameter Drain to Source Voltage Gate to Source Voltage
-Continuous -Pulsed Power Dissipation P
📁 Related Datasheet
📌 All Tags