Datasheet Details
- Part number
- FDC2612
- Manufacturer
- Fairchild Semiconductor
- File Size
- 201.74 KB
- Datasheet
- FDC2612_FairchildSemiconductor.pdf
- Description
- N-Channel MOSFET
FDC2612 Description
FDC2612 February 2002 FDC2612 200V N-Channel PowerTrench MOSFET General .
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional sw.
FDC2612 Features
* 1.1 A, 200 V. RDS(ON) = 725 mΩ @ VGS = 10 V
* High performance trench technology for extremely low RDS(ON)
* High power and current handling capability
* Fast switching speed
FDC2612 Applications
* DC/DC converter
D
D
S
1 2
G
6 5 4
SuperSOT TM -6
D
D
3
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current
* Continuous
* Pulsed Maximum Power Dissipation
TA=25oC unless otherwise noted
Parameter
Ratin
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