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FDC2612 N-Channel MOSFET

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Description

FDC2612 February 2002 FDC2612 200V N-Channel PowerTrench MOSFET General .
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional sw.

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Datasheet Specifications

Part number
FDC2612
Manufacturer
Fairchild Semiconductor
File Size
201.74 KB
Datasheet
FDC2612_FairchildSemiconductor.pdf
Description
N-Channel MOSFET

Features

* 1.1 A, 200 V. RDS(ON) = 725 mΩ @ VGS = 10 V
* High performance trench technology for extremely low RDS(ON)
* High power and current handling capability
* Fast switching speed

Applications

* DC/DC converter D D S 1 2 G 6 5 4 SuperSOT TM -6 D D 3 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current
* Continuous
* Pulsed Maximum Power Dissipation TA=25oC unless otherwise noted Parameter Ratin

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