FDC3535 - P-Channel MOSFET
* Max rDS(on) = 183 mΩ at VGS = -10 V, ID = -2.1 A * Max rDS(on) = 233 mΩ at VGS = -4.5 V, ID = -1.9 A * High performance trench technology for extremely low rDS(on) * High power and current handling capability in a widely used surface mount package * Fast sw
