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FDC3601N

N-Channel MOSFET

FDC3601N Features

* 1.0 A, 100 V. RDS(ON)= 500 mΩ @ VGS = 10 V RDS(ON)= 550 mΩ @ VGS = 6.0 V

* Low gate charge (3.7nC typical)

* Fast switching speed.

* High performance trench technology for extremely low R DS(ON) .

* SuperSOTTM-6 package: small footprint 72% (smaller than

FDC3601N General Description

These N-Channel 100V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptiona.

FDC3601N Datasheet (91.96 KB)

Preview of FDC3601N PDF

Datasheet Details

Part number:

FDC3601N

Manufacturer:

Fairchild Semiconductor

File Size:

91.96 KB

Description:

N-channel mosfet.

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TAGS

FDC3601N N-Channel MOSFET Fairchild Semiconductor

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