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FDC3601N - N-Channel MOSFET

FDC3601N Description

FDC3601N August 2001 FDC3601N Dual N-Channel 100V Specified PowerTrenchMOSFET General .
These N-Channel 100V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to.

FDC3601N Features

* 1.0 A, 100 V. RDS(ON)= 500 mΩ @ VGS = 10 V RDS(ON)= 550 mΩ @ VGS = 6.0 V
* Low gate charge (3.7nC typical)
* Fast switching speed.
* High performance trench technology for extremely low R DS(ON) .
* SuperSOTTM-6 package: small footprint 72% (smaller than

FDC3601N Applications

* where the bigger more expensive SO-8 and TSSOP-8 packages are impractical. Applications
* Load switch
* Battery protection

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N-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor FDC3601N-like datasheet