FDC3601N Datasheet - Fairchild Semiconductor

FDC3601N N-Channel MOSFET

These N-Channel 100V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptiona.

FDC3601N Features

* 1.0 A, 100 V. RDS(ON)= 500 mΩ @ VGS = 10 V RDS(ON)= 550 mΩ @ VGS = 6.0 V

* Low gate charge (3.7nC typical)

* Fast switching speed.

* High performance trench technology for extremely low R DS(ON) .

* SuperSOTTM-6 package: small footprint 72% (smaller than

FDC3601N_FairchildSemiconductor.pdf