FDC3601N

Dual N-Channel MOSFET

ON Semiconductor

FDC3601N Features

* 1.0 A, 100 V RDS(ON) = 500 W @ VGS = 10 V RDS(ON) = 550 W @ VGS = 6.0 V

* Low Gate Charge (3.7 nC Typical)

* Fast Switching Speed

* High Performance Trench Technology for Extremely Low RDS(ON)

* SUPERSOTt

* 6 Package: Small Footprint 72% (Smaller than

FDC3601N General Description

These N

*Channel 100 V specified MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize on

*state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptiona.

FDC3601N Datasheet (328.55 KB)

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FDC3601N

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ON Semiconductor ↗

File Size:

328.55 KB

Description:

Dual n-channel mosfet.

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FDC3601N Dual N-Channel MOSFET ON Semiconductor

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FDC3601N Features

FDC3601N General Description

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