FDC3601N Dual N-Channel MOSFET

ON Semiconductor

Description

MOSFET * Dual, N-Channel, POWERTRENCH) 100 V Specified FDC3601N General .
These N. Channel 100 V specified MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize.

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Datasheet Specifications

Part number: FDC3601N
Manufacturer: ON Semiconductor ↗
File Size: 328.55 KB
Datasheet: FDC3601N-ONSemiconductor.pdf
Description: Dual N-Channel MOSFET

Features

* 1.0 A, 100 V RDS(ON) = 500 W @ VGS = 10 V RDS(ON) = 550 W @ VGS = 6.0 V
* Low Gate Charge (3.7 nC Typical)
* Fast Switching Speed
* High Performance Trench Technology for Extremely Low RDS(ON)
* SUPERSOTt
* 6 Package: Small Footprint 72% (Smaller than

Applications

* where the bigger more expensive SO
* 8 and TSSOP

FDC3601N Distributors

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FDC3601N Dual N-Channel MOSFET ON Semiconductor

ON Semiconductor FDC3601N-like datasheet