FDC3601N Datasheet - ON Semiconductor

FDC3601N Dual N-Channel MOSFET

These N *Channel 100 V specified MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize on *state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptiona.

FDC3601N Features

* 1.0 A, 100 V RDS(ON) = 500 W @ VGS = 10 V RDS(ON) = 550 W @ VGS = 6.0 V

* Low Gate Charge (3.7 nC Typical)

* Fast Switching Speed

* High Performance Trench Technology for Extremely Low RDS(ON)

* SUPERSOTt

* 6 Package: Small Footprint 72% (Smaller than

FDC3601N-ONSemiconductor.pdf