FDC3601N - Dual N-Channel MOSFET
These N *Channel 100 V specified MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize on *state resistance and yet maintain low gate charge for superior switching performance.
These devices have been designed to offer exceptiona
FDC3601N Features
* 1.0 A, 100 V RDS(ON) = 500 W @ VGS = 10 V RDS(ON) = 550 W @ VGS = 6.0 V
* Low Gate Charge (3.7 nC Typical)
* Fast Switching Speed
* High Performance Trench Technology for Extremely Low RDS(ON)
* SUPERSOTt
* 6 Package: Small Footprint 72% (Smaller than
