FDC3612 N-Channel MOSFET

ON Semiconductor

Description

MOSFET * N-Channel, POWERTRENCH) 100 V FDC3612 General .
This N. Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or convent.

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Datasheet Specifications

Part number: FDC3612
Manufacturer: ON Semiconductor ↗
File Size: 320.06 KB
Datasheet: FDC3612-ONSemiconductor.pdf
Description: N-Channel MOSFET

Features

* 2.6 A, 100 V RDS(ON) = 125 mW @ VGS = 10 V RDS(ON) = 135 mW @ VGS = 6 V
* High Performance Trench Technology for Extremely Low RDS(ON)
* Low Gate Charge (14 nC Typical)
* High Power and Current Handling Capability
* Fast Switching Speed
* This is a P

Applications

* DC/DC Converter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Ratings Unit VDSS Drain
* Source Voltage 100 V VGSS Gate
* Source Voltage ±20 V ID Drain Current Continuous (Note 1a) 2.6 A Pulsed 20 A EAS Single Pulse Avalanche Ene

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FDC3612 N-Channel MOSFET ON Semiconductor

ON Semiconductor FDC3612-like datasheet