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FDC653N

N-Channel MOSFET

FDC653N Features

* 5.0 A, 30 V RDS(ON) = 0.035 W @ VGS = 10 V RDS(ON) = 0.055 W @ VGS = 4.5 V

* Proprietary SUPERSOTTM

* 6 Package Design Using Copper Lead Frame for Superior Thermal and Electrical Capabilities.

* High Density Cell Design for Extremely Low RDS(ON).

* Exceptional

FDC653N General Description

This N

*Channel enhancement mode power field effect transistor is produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on

*state resistance. These devices are particularly suited for low voltage applications in .

FDC653N Datasheet (311.99 KB)

Preview of FDC653N PDF

Datasheet Details

Part number:

FDC653N

Manufacturer:

ON Semiconductor ↗

File Size:

311.99 KB

Description:

N-channel mosfet.

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TAGS

FDC653N N-Channel MOSFET ON Semiconductor

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