FDC653N Datasheet - ON Semiconductor

FDC653N N-Channel MOSFET

This N *Channel enhancement mode power field effect transistor is produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on *state resistance. These devices are particularly suited for low voltage applications in .

FDC653N Features

* 5.0 A, 30 V RDS(ON) = 0.035 W @ VGS = 10 V RDS(ON) = 0.055 W @ VGS = 4.5 V

* Proprietary SUPERSOTTM

* 6 Package Design Using Copper Lead Frame for Superior Thermal and Electrical Capabilities.

* High Density Cell Design for Extremely Low RDS(ON).

* Exceptional

FDC653N-ONSemiconductor.pdf