FDC653N - N-Channel MOSFET
This N *Channel enhancement mode power field effect transistor is produced using onsemi’s proprietary, high cell density, DMOS technology.
This very high density process is tailored to minimize on *state resistance.
These devices are particularly suited for low voltage applications in
FDC653N Features
* 5.0 A, 30 V RDS(ON) = 0.035 W @ VGS = 10 V RDS(ON) = 0.055 W @ VGS = 4.5 V
* Proprietary SUPERSOTTM
* 6 Package Design Using Copper Lead Frame for Superior Thermal and Electrical Capabilities.
* High Density Cell Design for Extremely Low RDS(ON).
* Exceptional
