FDC653N
Description
This N-Channel enhancement mode power field effect transistor is produced using onsemi’s proprietary, high cell density, DMOS technology.
Key Features
- 5.0 A, 30 V RDS(ON) = 0.035 W @ VGS = 10 V RDS(ON) = 0.055 W @ VGS = 4.5 V
- Proprietary SUPERSOTTM-6 Package Design Using Copper Lead Frame for Superior Thermal and Electrical Capabilities
- High Density Cell Design for Extremely Low RDS(ON)
- Exceptional On-Resistance and Maximum DC Current Capability
- This Device is Pb-Free and Halogen Free
