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FDC653N N-Channel MOSFET

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Description

N-Channel Enhancement Mode Field Effect Transistor FDC653N General .
This N. Channel enhancement mode power field effect transistor is produced using onsemi’s proprietary, high cell density, DMOS technology.

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Features

* 5.0 A, 30 V RDS(ON) = 0.035 W @ VGS = 10 V RDS(ON) = 0.055 W @ VGS = 4.5 V
* Proprietary SUPERSOTTM
* 6 Package Design Using Copper Lead Frame for Superior Thermal and Electrical Capabilities.
* High Density Cell Design for Extremely Low RDS(ON).
* Exceptional

Applications

* in notebook computers, portable phones, PCMICA cards, and other battery powered circuits where fast switching, and low in

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N-Channel MOSFET ON Semiconductor
ON Semiconductor FDC653N-like datasheet