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FDC653N - N-Channel MOSFET

Datasheet Details

Part number FDC653N
Manufacturer onsemi
File Size 311.99 KB
Description N-Channel MOSFET
Datasheet download datasheet FDC653N Datasheet

General Description

This N−Channel enhancement mode power field effect transistor is produced using onsemi’s proprietary, high cell density, DMOS technology.

This very high density process is tailored to minimize on−state resistance.

These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMICA cards, and other battery powered circuits where fast switching, and low in−line power loss are needed in a very small outline surface mount package.

Overview

N-Channel Enhancement Mode Field Effect Transistor FDC653N General.

Key Features

  • 5.0 A, 30 V RDS(ON) = 0.035 W @ VGS = 10 V RDS(ON) = 0.055 W @ VGS = 4.5 V.
  • Proprietary.