FDMA86151L

N-Channel MOSFET

ON Semiconductor

* Max RDS(on) = 88 mW @ VGS = 10 V, ID = 3.3 A

* Max RDS(on) = 132 mW @ VGS = 4.5 V, ID = 2.7 A

* Low Profile

* 0.8 mm Maximum in the New Package MicroFET 2x2 mm

* Free from Halogenated Compounds and Antimony Oxides

* RoHS Compliant Applications

FDMA86151L

440.64 KB

N-channel mosfet.

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FDMA86151L N-Channel MOSFET ON Semiconductor

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