FDMC610P P-Channel MOSFET

ON Semiconductor

Description

MOSFET * P-Channel, POWERTRENCH) -12 V, -80 A, 3.9 mW FDMC610P General .
This P. Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters.

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Datasheet Specifications

Part number: FDMC610P
Manufacturer: ON Semiconductor ↗
File Size: 369.32 KB
Datasheet: FDMC610P-ONSemiconductor.pdf
Description: P-Channel MOSFET

Features

* Max rDS(on) = 3.9 mW at VGS =
* 4.5 V, ID =
* 22 A
* Max rDS(on) = 6.4 mW at VGS =
* 2.5 V, ID =
* 16 A
* State
* of
* the
* art Switching Performance
* Lower Output Capacitance, Gate Resistance, and Gate Charge Boost Ef

Applications

* High Side Switching for High End Computing
* High Power Density DC
* DC Synchronous Buck Converter MOSFET MAXIMUM RATINGS (TA = 25°C, unless otherwise noted) Symbol Parameter Ratings Unit VDS Drain to Source Voltage VGS Gate to Source Voltage ID Drain Current
* C

FDMC610P Distributors

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FDMC610P P-Channel MOSFET ON Semiconductor

ON Semiconductor FDMC610P-like datasheet