FDMC610P - P-Channel MOSFET

ON Semiconductor

FDMC610P Datasheet Preview — Preview of FDMC610P PDF

Datasheet Details

Part number	FDMC610P
Manufacturer	ON Semiconductor ↗
File Size	369.32 KB
Description	P-Channel MOSFET
Datasheet	FDMC610P-ONSemiconductor.pdf

FDMC610P Product details

Description

This P Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.

Features

Max rDS(on) = 3.9 mW at VGS =.
4.5 V, ID =.
22 A.
Max rDS(on) = 6.4 mW at VGS =.
2.5 V, ID =.
16 A.
State.
of.
the.
art Switching Performance.
Lower Output Capacitance, Gate Resistance, and Gate Charge Boost Efficiency.
Shielded Gate Technology Reduces Switch Node Ringing and Increases Immunity to EMI and Cross Conduction.
This Device is Pb.
Free, Halide Free and is RoHS Compliant A.

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Published: Dec 19, 2023 |