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FDY1002PZ

Dual P-Channel MOSFET

FDY1002PZ Features

* Max rDS(on) = 0.5 W at VGS =

* 4.5 V, ID =

* 0.83 A

* Max rDS(on) = 0.7 W at VGS =

* 2.5 V, ID =

* 0.70 A

* Max rDS(on) = 1.2 W at VGS =

* 1.8 V, ID =

* 0.43 A

* Max rDS(on) = 1.8 W at VGS =

* 1.5 V, ID =

* 0.3

FDY1002PZ General Description

These P

*Channel Logic Level MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on

*state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for all applications w.

FDY1002PZ Datasheet (251.05 KB)

Preview of FDY1002PZ PDF

Datasheet Details

Part number:

FDY1002PZ

Manufacturer:

ON Semiconductor ↗

File Size:

251.05 KB

Description:

Dual p-channel mosfet.

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FDY1002PZ Dual P-Channel MOSFET ON Semiconductor

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