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FDY1002PZ Dual P-Channel MOSFET

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Description

MOSFET * Dual, P-Channel (-1.5 V), Specified, POWERTRENCH) *20 V, *0.83 A, 0.5 W FDY1002PZ General .
These P. Channel Logic Level MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the.

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Features

* Max rDS(on) = 0.5 W at VGS =
* 4.5 V, ID =
* 0.83 A
* Max rDS(on) = 0.7 W at VGS =
* 2.5 V, ID =
* 0.70 A
* Max rDS(on) = 1.2 W at VGS =
* 1.8 V, ID =
* 0.43 A
* Max rDS(on) = 1.8 W at VGS =
* 1.5 V, ID =
* 0.3

Applications

* where small size is desireable but especially low cost DC/DC conversion in battery powered systems. This Dual P
* Channel MOSFET has been designed using onsemi’s advanced Power Trench process to optimize the rDS(on) @ VGS =

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FDY1002PZ Dual P-Channel MOSFET ON Semiconductor
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