FFSH5065A-F155 SiC Schottky Diode

ON Semiconductor

Description

Silicon Carbide (SiC) Schottky Diode * EliteSiC, 50 A, 650 V, D1, TO-247-3L FFSH5065A-F155 .
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to.

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Datasheet Specifications

Part number: FFSH5065A-F155
Manufacturer: ON Semiconductor ↗
File Size: 402.54 KB
Datasheet: FFSH5065A-F155-ONSemiconductor.pdf
Description: SiC Schottky Diode

Features

* Max Junction Temperature 175°C
* Avalanche Rated 240 mJ
* High Surge Current Capacity
* Positive Temperature Coefficient
* Ease of Paralleling
* No Reverse Recovery/No Forward Recovery
* These Devices are Pb
* Free, Halogen Free/BFR Fre

Applications

* General Purpose
* SMPS, Solar Inverter, UPS
* Power Switching Circuits DATA SHEET www. onsemi. com 2. Cathode 3. Anode 1. No Connection Schottky Diode 1 23 TO
* 247
* 3LD LONG LEAD CASE 340CX MARKING DIAGRAM AYWWZZ FFSH 5065A A YWW ZZ FFSH5065A = Assembly Pla

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FFSH5065A-F155 SiC Schottky Diode ON Semiconductor

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