FFSH5065A-F155

SiC Schottky Diode

ON Semiconductor

FFSH5065A-F155 Features

* Max Junction Temperature 175°C

* Avalanche Rated 240 mJ

* High Surge Current Capacity

* Positive Temperature Coefficient

* Ease of Paralleling

* No Reverse Recovery/No Forward Recovery

* These Devices are Pb

* Free, Halogen Free/BFR Fre

FFSH5065A-F155 General Description

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the.

FFSH5065A-F155 Datasheet (402.54 KB)