FFSH20120A Datasheet - ON Semiconductor

Silicon Carbide Schottky Diode

FFSH20120A Features

* Max Junction Temperature 175°C

* Avalanche Rated 200 mJ

* High Surge Current Capacity

* Positive Temperature Coefficient

* Ease of Paralleling

* No Reverse Recovery/No Forward Recovery

* This Device is Pb

* Free, Halogen Free/BFR Free a

FFSH20120A General Description

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the.

FFSH20120A Datasheet (329.07 KB)