FFSH20120A Datasheet, Diode, ON Semiconductor

✔ FFSH20120A Features

Max Junction Temperature 175°C
Avalanche Rated 200 mJ
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery/No

✔ FFSH20120A Application

General Purpose
SMPS, Solar Inverter, UPS
Power Switching Circuits DATA SHEET www.onsemi.com 1. Catho

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FFSH20120A

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Silicon carbide schottky diode. Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliabi

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DIODE SIL CARB 1200V 30A TO2472

DigiKey

FFSH20120A

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Qty : 450 units

Unit Price : $6.88

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FFSH20120A Silicon Carbide Schottky Diode ON Semiconductor