FFSH3065B Datasheet - ON Semiconductor

FFSH3065B SiC Schottky Diode

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the.

FFSH3065B Features

* Max Junction Temperature 175°C

* Avalanche Rated 144 mJ

* High Surge Current Capacity

* Positive Temperature Coefficient

* Ease of Paralleling

* No Reverse Recovery/No Forward Recovery

* AEC

* Q101 Qualified

* These Devices are

FFSH3065B-ONSemiconductor.pdf