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FFSH10120A SiC Schottky Diode

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Description

Silicon Carbide (SiC) Schottky Diode * EliteSiC, 10 A, 1200 V, D1, TO-247-2L FFSH10120A .
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to.

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Features

* Max Junction Temperature 175°C
* Avalanche Rated 100 mJ
* High Surge Current Capacity
* Positive Temperature Coefficient
* Ease of Paralleling
* No Reverse Recovery/No Forward Recovery
* These Devices are Pb
* Free, Halogen Free/BFR Fre

Applications

* General Purpose
* SMPS, Solar Inverter, UPS
* Power Switching Circuits DATA SHEET www. onsemi. com 1. Cathode 2. Anode Schottky Diode 1 2 TO
* 247
* 2LD CASE 340CL MARKING DIAGRAM AYWWZZ FFSH 10120A A YWW ZZ FFSH10120A = Assembly Plant Code = Date Code (Year

FFSH10120A Distributors

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📌 All Tags

FFSH10120A SiC Schottky Diode ON Semiconductor
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