FFSH10120A Datasheet - ON Semiconductor

FFSH10120A SiC Schottky Diode

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the.

FFSH10120A Features

* Max Junction Temperature 175°C

* Avalanche Rated 100 mJ

* High Surge Current Capacity

* Positive Temperature Coefficient

* Ease of Paralleling

* No Reverse Recovery/No Forward Recovery

* These Devices are Pb

* Free, Halogen Free/BFR Fre

FFSH10120A-ONSemiconductor.pdf