FFSH20120A-F085

Silicon Carbide Schottky Diode

ON Semiconductor

FFSH20120A-F085 Features

* Max Junction Temperature 175°C

* Avalanche Rated 210 mJ

* High Surge Current Capacity

* Positive Temperature Coefficient

* Ease of Paralleling

* No Reverse Recovery/No Forward Recovery

* AEC

* Q101 Qualified and PPAP Capable

* T

FFSH20120A-F085 General Description

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the.

FFSH20120A-F085 Datasheet (427.19 KB)