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FFSH20120A-F085 Silicon Carbide Schottky Diode

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Description

Silicon Carbide Schottky Diode 1200 V, 20 A FFSH20120A-F085 .
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to.

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Features

* Max Junction Temperature 175°C
* Avalanche Rated 210 mJ
* High Surge Current Capacity
* Positive Temperature Coefficient
* Ease of Paralleling
* No Reverse Recovery/No Forward Recovery
* AEC
* Q101 Qualified and PPAP Capable
* T

Applications

* Automotive HEV
* EV Onboard Chargers
* Automotive HEV
* EV DC
* DC Converters www. onsemi. com 1. Cathode 2. Anode Schottky Diode 1 2 TO
* 247
* 2LD CASE 340CL MARKING DIAGRAM $Y&Z&3&K FFSH 20120A $Y &Z &3 &K FFSH20120A = ON Semiconductor Logo = Assem

FFSH20120A-F085 Distributors

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FFSH20120A-F085 Silicon Carbide Schottky Diode ON Semiconductor
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