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FFSH30120A-F155 SiC Schottky Diode

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Description

Silicon Carbide (SiC) Schottky Diode * EliteSiC, 30 A, 1200 V, D1, TO-247-2L FFSH30120A-F155 .
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to.

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Features

* Max Junction Temperature 175°C
* Avalanche Rated 361 mJ
* High Surge Current Capacity
* Positive Temperature Coefficient
* Ease of Paralleling
* No Reverse Recovery/No Forward Recovery
* This Device is Pb
* Free, Halogen Free/BFR Free a

Applications

* General Purpose
* SMPS, Solar Inverter, UPS
* Power Switching Circuits DATA SHEET www. onsemi. com 1. Cathode 2. Anode Schottky Diode TO
* 247
* 2LD CASE 340DC MARKING DIAGRAM AYWWZZ FFSH 30120A A YWW ZZ FFSH30120A = Assembly Plant Code = Date Code (Year & Wee

FFSH30120A-F155 Distributors

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FFSH30120A-F155 SiC Schottky Diode ON Semiconductor
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