FFSH30120A-F155

SiC Schottky Diode

ON Semiconductor

FFSH30120A-F155 Features

* Max Junction Temperature 175°C

* Avalanche Rated 361 mJ

* High Surge Current Capacity

* Positive Temperature Coefficient

* Ease of Paralleling

* No Reverse Recovery/No Forward Recovery

* This Device is Pb

* Free, Halogen Free/BFR Free a

FFSH30120A-F155 General Description

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the.

FFSH30120A-F155 Datasheet (381.39 KB)