FFSPF0865A SiC Schottky Diode

ON Semiconductor

Description

Silicon Carbide (SiC) Schottky Diode * EliteSiC, 8 A, 650 V, D1, TO-220F-2L FFSPF0865A .
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to.

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Datasheet Specifications

Part number: FFSPF0865A
Manufacturer: ON Semiconductor ↗
File Size: 280.03 KB
Datasheet: FFSPF0865A-ONSemiconductor.pdf
Description: SiC Schottky Diode

Features

* Max Junction Temperature 175°C
* Avalanche Rated 49 mJ
* High Surge Current Capacity
* Positive Temperature Coefficient
* Ease of Paralleling
* No Reverse Recovery/No Forward Recovery
* This Device is Pb
* Free, Halogen Free/BFR Free an

Applications

* General Purpose
* SMPS, Solar Inverter, UPS
* Power Switching Circuits DATA SHEET www. onsemi. com 1. Cathode 2. Anode Schottky Diode 1. 2. TO
* 220 FP / TO
* 220F
* 2FS CASE 221AS MARKING DIAGRAM AXYYKK FFSPF 0865A A XYY KK FFSPF0865A = Assembly Plant Co

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FFSPF0865A SiC Schottky Diode ON Semiconductor

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