FGY75T120SQDN Datasheet, Igbt, ON Semiconductor

FGY75T120SQDN Features

• Igbt a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal s

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FGY75T120SQDN

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📄 Datasheet

Description:

Igbt. This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides

FGY75T120SQDN Application

• Applications offering both low on-state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated in

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FGY75T120SQDN

ON Semiconductor

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