FGY75T95LQDT IGBT

ON Semiconductor

Description

IGBT - Field Stop, Trench 75 A, 950 V Product Preview FGY75T95LQDT Trench Field Stop 4th generation Low Vcesat IGBT co *packaged with full cur.

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Datasheet Specifications

Part number: FGY75T95LQDT
Manufacturer: ON Semiconductor ↗
File Size: 660.17 KB
Datasheet: FGY75T95LQDT-ONSemiconductor.pdf
Description: IGBT

Features

* Maximum Junction Temperature : TJ = 175℃
* Positive Temperature Co
* efficient for Easy Parallel Operating
* High Current Capability
* Low Saturation Voltage: VCE(Sat) = 1.31 V (Typ. ) @ IC = 75 A
* Fast Switching
* Tighten Parameter Distributio

Applications

* Solar Inverter MAXIMUM RATINGS Rating Symbol Value Unit Collector to Emitter Voltage Gate to Emitter Voltage Transient Gate to Emitter Voltage VCES VGES 950 V ±20 V ±30 Collector Current @TC = 25°C IC @TC = 100°C 150 A 75 Pulsed Collector Current (Note 1) ILM 225 A

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FGY75T95LQDT IGBT ON Semiconductor

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