FGY75T120SWD

N-Channel Power IGBT

ON Semiconductor

* Maximum Junction Temperature

* TJ = 175°C

* Positive Temperature Coefficient for Easy Parallel Operation

* High Current Capability

* Smooth and Optimized Switching

* Low Switching Loss

* RoHS Compliant Applications

* Boost and Inverte

FGY75T120SWD

349.15 KB

N-channel power igbt.

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FGY75T120SWD N-Channel Power IGBT ON Semiconductor

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