FQD4N25 - N-Channel MOSFET

ON Semiconductor

Datasheet Details

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology.

3 A, 250 V, RDS(on) = 1.75 Ω (Max. ) @ VGS = 10 V, ID = 1.5 A.
Low Gate Charge (Typ. 4.3 nC).
Low Crss (Typ. 4.8 pF).
100% Avalanche Tested G S D D-PAK D G Absolute Maximum Ratings TC = 25°C unless otherwise noted. + 7 7 + < 7 < !$ : + 2-).
84 2-. ''84 : ; + :(! < (! .

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Published: Jun 28, 2022 |