NDT3055 Datasheet - ON Semiconductor

N-Channel Enhancement Mode Field Effect Transistor

NDT3055 Features

* 4 A, 60 V

* RDS(ON) = 0.100 W @ VGS = 10 V

* High Density Cell Design for Extremely Low RDS(ON)

* High Power and Current Handling Capability in a Widely Used Surface Mount Package

* This is a Pb

* Free Device ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unles

NDT3055 General Description

These N *Channel enhancement mode power field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on *state resistance and provide superior switching performance. These devices.

NDT3055 Datasheet (196.06 KB)