NTBGS2D5N06C
225.99kb
N-channel mosfet.
TAGS
📁 Related Datasheet
NTBGS001N06C - N-Channel MOSFET
(ON Semiconductor)
MOSFET - Power, Single N-Channel, D2PAK7
60 V, 1.1 mW, 342 A
NTBGS001N06C
Features
• Low RDS(on) to Minimize Conduction Losses • Low QG and Capacita.
NTBGS002N06C - N-Channel MOSFET
(ON Semiconductor)
MOSFET - Power, Single N-Channel, D2PAK7
60 V, 2.1 mW, 211 A
NTBGS002N06C
Features
• Low RDS(on) to Minimize Conduction Losses • Low QG and Capacita.
NTBGS004N10G - N-Channel MOSFET
(ON Semiconductor)
MOSFET - Power, Single N-Channel, D2PAK7
100 V, 4.1 mW, 203 A
NTBGS004N10G
Features
• Low RDS(on) • High Current Capability • Wide SOA • These Devic.
NTBGS1D5N06C - N-Channel MOSFET
(ON Semiconductor)
MOSFET - Power, Single N-Channel, D2PAK7
60 V, 1.55 mW, 267 A
NTBGS1D5N06C
Features
• Low RDS(on) to Minimize Conduction Losses • Low QG and Capacit.
NTBGS3D5N06C - N-Channel MOSFET
(ON Semiconductor)
MOSFET - Power, Single N-Channel, D2PAK7
60 V, 3.7 mW, 127 A
NTBGS3D5N06C
Features
• Low RDS(on) to Minimize Conduction Losses • Low QG and Capacita.
NTBGS4D1N15MC - Single N-Channel MOSFET
(ON Semiconductor)
MOSFET - Single N-Channel
150 V, 4.1 mW, 185 A
NTBGS4D1N15MC
Features
Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimiz.
NTBG014N120M3P - SiC MOSFET
(ON Semiconductor)
Silicon Carbide (SiC) MOSFET – EliteSiC, 14 mohm, 1200 V, M3P, D2PAK-7L
NTBG014N120M3P
Features
• Typ. RDS(on) = 14 mW • Low Switching Losses (Typ. .
NTBG015N065SC1 - SiC MOSFET
(ON Semiconductor)
DATA SHEET .onsemi.
Silicon Carbide (SiC) MOSFET – EliteSiC, 12 mohm, 650 V, M2, D2PAK-7L
NTBG015N065SC1
Features
• Typ. RDS(on) = 12 mW @ VGS.
NTBG020N090SC1 - SiC MOSFET
(ON Semiconductor)
DATA SHEET .onsemi.
Silicon Carbide (SiC) MOSFET – EliteSiC, 20 mohm, 900 V, M2, D2PAK-7L
NTBG020N090SC1
Features
• Typ. RDS(on) = 20 mW @ VG.
NTBG020N120SC1 - SiC MOSFET
(ON Semiconductor)
DATA SHEET .onsemi.
Silicon Carbide (SiC) MOSFET – EliteSiC, 20 mohm, 1200 V, M1, D2PAK-7L
NTBG020N120SC1
Features
• Typ. RDS(on) = 20 mW • Ul.