Part number:
NTD78N03
Manufacturer:
File Size:
108.29 KB
Description:
Power mosfet.
NTD78N03 Datasheet (108.29 KB)
* www.DataSheet4U.com
* Low RDS(on)
* Optimized Gate Charge
* Pb
* Free Packages are Available Applications http://onsemi.com V(BR)DSS 25 V RDS(on) TYP 4.6 @ 10 V 6.5 @ 4.5 V D ID MAX 78 A
* Desktop VCORE
* DC
* DC Converters
* Low Side S
NTD78N03 Datasheet (108.29 KB)
NTD78N03
108.29 KB
Power mosfet.
📁 Related Datasheet
NTD70N03R - Power MOSFET
(ON Semiconductor)
NTD70N03R
Power MOSFET
72 A, 25 V, N-Channel DPAK
Features
•ăPlanar HD3e Process for Fast Switching Performance •ăLow RDS(on) to Minimize Conduction.
NTD72A - Thyristor/Diode Module
(Naina Semiconductor)
Naina Semiconductor Ltd.
NTD72A
Features
Thyristor/Diode Module, 70A
• Improved glass passivation for high reliability • Exceptional stability at .
NTD08 - HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS
(EDI)
NTD
HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS
DIFFUSED SILICON JUNCTIONS PRV 8,000 TO 60,000 VOLTS AVALANCHE CHARACTERISTICS LOW LEAKAGE
Peak EDI.
NTD10 - HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS
(EDI)
NTD
HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS
DIFFUSED SILICON JUNCTIONS PRV 8,000 TO 60,000 VOLTS AVALANCHE CHARACTERISTICS LOW LEAKAGE
Peak EDI.
NTD106B - Thyristor/Diode Module
(Naina Semiconductor)
Naina Semiconductor Ltd.
NTD106B
Features
Thyristor/Diode Module, 106A
• Improved glass passivation for high reliability • Exceptional stability a.
NTD110N02R - Power MOSFET
(ON Semiconductor)
NTD110N02R, STD110N02R
MOSFET – Power, N-Channel, DPAK
24 V, 110 A
Features
• Planar HD3e Process for Fast Switching Performance • Low RDS(on) to Mi.
NTD110N02R-001G - N-Channel MOSFET
(VBsemi)
NTD110N02R-001G-VB
NTD110N02R-001G-VB Datasheet
N-Channel 20-V (D-S)175 _C MOSFET
.VBsemi.
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.0045 @ VGS.
NTD12 - HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS
(EDI)
NTD
HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS
DIFFUSED SILICON JUNCTIONS PRV 8,000 TO 60,000 VOLTS AVALANCHE CHARACTERISTICS LOW LEAKAGE
Peak EDI.
