NTDV20N06L Datasheet, Mosfet, ON Semiconductor

PDF File Details

Part number:

NTDV20N06L

Manufacturer:

ON Semiconductor ↗

File Size:

143.27kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

TAGS

NTDV20N06L

ON Semiconductor

📁 Related Datasheet

NTDV20N06 - N-channel MOSFET (ON Semiconductor)
MOSFET – Power, N-Channel, DPAK 20 A, 60 V NTD20N06, NTDV20N06 Description Designed for low voltage, high speed switching applications in power suppli.

NTDV20P06L - P-Channel Power MOSFET (ON Semiconductor)
NTD20P06L, NTDV20P06L MOSFET – Power, Single, P-Channel, DPAK -60 V, -15.5 A Features • Withstands High Energy in Avalanche and Commutation Modes • .

NTDV18N06L - Power MOSFET (ON Semiconductor)
MOSFET – Power, N-Channel, Logic Level, DPAK 18 A, 60 V NTD18N06L, NTDV18N06L Designed for low voltage, high speed switching applications in power s.

NTDV3055L104 - N-Channel Power MOSFET (ON Semiconductor)
MOSFET – Power, N-Channel, Logic Level, DPAK/IPAK 12 A, 60 V NTD3055L104, NTDV3055L104 Designed for low voltage, high speed switching applications in .

NTDV5804N - Power MOSFET (ON Semiconductor)
NTD5804N, NTDV5804N, SVD5804N Power MOSFET 40 V, 69 A, Single N−Channel, DPAK Features • Low RDS(on) • High Current Capability • Avalanche Energy Spe.

NTD08 - HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS (EDI)
NTD HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS DIFFUSED SILICON JUNCTIONS PRV 8,000 TO 60,000 VOLTS AVALANCHE CHARACTERISTICS LOW LEAKAGE Peak EDI.

NTD10 - HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS (EDI)
NTD HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS DIFFUSED SILICON JUNCTIONS PRV 8,000 TO 60,000 VOLTS AVALANCHE CHARACTERISTICS LOW LEAKAGE Peak EDI.

NTD106B - Thyristor/Diode Module (Naina Semiconductor)
Naina Semiconductor Ltd. NTD106B Features Thyristor/Diode Module, 106A • Improved glass passivation for high reliability • Exceptional stability a.

NTD110N02R - Power MOSFET (ON Semiconductor)
NTD110N02R, STD110N02R MOSFET – Power, N-Channel, DPAK 24 V, 110 A Features • Planar HD3e Process for Fast Switching Performance • Low RDS(on) to Mi.

NTD110N02R-001G - N-Channel MOSFET (VBsemi)
NTD110N02R-001G-VB NTD110N02R-001G-VB Datasheet N-Channel 20-V (D-S)175 _C MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.0045 @ VGS.