NTDV5804N
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Power mosfet.
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NTDV18N06L - Power MOSFET
(ON Semiconductor)
MOSFET – Power, N-Channel, Logic Level, DPAK
18 A, 60 V
NTD18N06L, NTDV18N06L
Designed for low voltage, high speed switching applications in power s.
NTDV20N06 - N-channel MOSFET
(ON Semiconductor)
MOSFET – Power, N-Channel, DPAK
20 A, 60 V
NTD20N06, NTDV20N06
Description Designed for low voltage, high speed switching applications in power
suppli.
NTDV20N06L - N-channel MOSFET
(ON Semiconductor)
NTD20N06L, NTDV20N06L
MOSFET – Power, N-Channel, Logic Level, DPAK/IPAK
20 A, 60 V
Designed for low voltage, high speed switching applications in p.
NTDV20P06L - P-Channel Power MOSFET
(ON Semiconductor)
NTD20P06L, NTDV20P06L
MOSFET – Power, Single, P-Channel, DPAK
-60 V, -15.5 A
Features
• Withstands High Energy in Avalanche and Commutation Modes • .
NTDV3055L104 - N-Channel Power MOSFET
(ON Semiconductor)
MOSFET – Power, N-Channel, Logic Level, DPAK/IPAK
12 A, 60 V
NTD3055L104, NTDV3055L104
Designed for low voltage, high speed switching applications in .
NTD08 - HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS
(EDI)
NTD
HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS
DIFFUSED SILICON JUNCTIONS PRV 8,000 TO 60,000 VOLTS AVALANCHE CHARACTERISTICS LOW LEAKAGE
Peak EDI.
NTD10 - HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS
(EDI)
NTD
HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS
DIFFUSED SILICON JUNCTIONS PRV 8,000 TO 60,000 VOLTS AVALANCHE CHARACTERISTICS LOW LEAKAGE
Peak EDI.
NTD106B - Thyristor/Diode Module
(Naina Semiconductor)
Naina Semiconductor Ltd.
NTD106B
Features
Thyristor/Diode Module, 106A
• Improved glass passivation for high reliability • Exceptional stability a.
NTD110N02R - Power MOSFET
(ON Semiconductor)
NTD110N02R, STD110N02R
MOSFET – Power, N-Channel, DPAK
24 V, 110 A
Features
• Planar HD3e Process for Fast Switching Performance • Low RDS(on) to Mi.
NTD110N02R-001G - N-Channel MOSFET
(VBsemi)
NTD110N02R-001G-VB
NTD110N02R-001G-VB Datasheet
N-Channel 20-V (D-S)175 _C MOSFET
.VBsemi.
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.0045 @ VGS.