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NTH4L040N120SC1 SiC MOSFET

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Description

DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET * EliteSiC, 40 mohm, 1200 V, M1, TO-247-4L NTH4L040N120SC1 .

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Features

* Typ. RDS(on) = 40 mW
* Ultra Low Gate Charge (QG(tot) = 106 nC)
* High Speed Switching with Low Capacitance (Coss = 137 pF)
* 100% Avalanche Tested
* TJ = 175°C
* This Device is Halide Free and RoHS Compliant with exemption 7a, Pb
* Free 2LI (o

Applications

* UPS
* DC-DC Converter
* Boost Inverter MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain
* to
* Source Voltage VDSS 1200 V Gate
* to
* Source Voltage VGS
* 15/+25 V Recommended Operation Values TC

NTH4L040N120SC1 Distributors

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SiC MOSFET ON Semiconductor
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